Intrinsic polarization superjunctions
Reported III-nitride heterostructure devices exceeding 3.9 kV for Schottky diodes and 3.4 kV for transistors.
Primary source ↗Follow the frontier.
Research entries should distinguish primary evidence from interpretation and industry claims.
4H-SiC SJ-HMOS
A reported architecture using an N-poly-Si/N-SiC heterojunction; published simulations reported 1588 V breakdown and 2.02 mΩ·cm² specific on-resistance.
Research source ↗SiC SJ commercialization
Industry reporting points toward 1200V+ SiC superjunction products. Commercial specifications should always be checked against current manufacturer documentation.
Industry source ↗