ADVANCED POWER SEMICONDUCTOR TECHNOLOGY

Higher Voltage.
Lower Losses.
A Cleaner Tomorrow.

Superjunction technology is reshaping high-voltage power conversion — from silicon MOSFETs to SiC, GaN and emerging charge-engineered architectures.

IndependentEngineering-firstEvidence-led
SUPERJUNCTION
Charge Balance. Higher Performance.
SOURCE
DRAIN
P-type pillarN-type pillarDrift region
Higher
Breakdown Voltage
Lower
RDS(on)
Improved
Power Density
Greater
Efficiency
Enabling a
Greener Future
600V–1700V+Voltage classes across SJ research & products
RDS(on) × QgCore switching / conduction trade-off
>95%Efficiency target in many power-conversion systems
EV · Solar · AI · IndustrialWhere power density matters
Evidence FirstClaims separated from independent analysis
GLOBAL TECHNOLOGY ECOSYSTEM

Companies advancing power semiconductors.

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LATEST RESEARCH

Research radar

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08SEP
2026
RESEARCH

Intrinsic polarization superjunctions

Emerging III-nitride architectures use polarization engineering to create charge-balanced structures without conventional intentional doping.

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SJRADAR
TREND

Silicon → SiC → GaN

Track the migration of superjunction ideas into wide-bandgap power electronics.

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POWERING GLOBAL PROGRESS

Better power electronics.
Less wasted energy.

Superjunctions.com maps the technology behind more efficient power conversion.

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THE INTELLIGENCE LAYER

One place to move from curiosity to engineering judgment.

Read the physics. Compare the devices. Follow the companies. Run the first-order calculation. Then go to the original source.

The useful question is not which device has the lowest headline RDS(on). It is which device minimizes total system loss under the actual voltage, current, frequency, temperature, topology and gate-drive conditions.

ENGINEERING PRINCIPLE · SUPERJUNCTIONS.COM
SUPERJUNCTIONS.COM

Powering a more efficient world.

Independent intelligence for the people building the next generation of power electronics.