What is moving the frontier?
Research is where superjunction becomes a platform concept: new materials, new charge-balancing mechanisms and higher-voltage structures can extend the original idea.
Superjunction history and future prospects
IEEE review covers the device history, process development, design/modeling challenges and extension of the concept to other structures and materials.
1.2 kV SiC superjunction MOSFET research
Fuji Electric reported 4H-SiC SJ MOSFET structures and compared on-resistance and reverse-recovery behavior against conventional trench-gate devices.
600 V SJ expansion into compact surface-mount packages
ROHM announced new 600 V SJ MOSFET families for AI-server and industrial power supplies, including DFN and TOLL packages.
Intrinsic polarization superjunctions
III-nitride heterostructure research explores using spontaneous and piezoelectric polarization to create charge-balanced structures without relying on conventional intentional doping in the same way as classic SJ architectures. Treat this as an emerging research direction, not a mature commercial category.